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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9836

Title: Incorporation of phosphorus donors in (110)-textured polycrystalline diamond
Authors: LAZEA, Andrada
Barjon, Julien
D'HAEN, Jan
MORTET, Vincent
D'OLIESLAEGER, Marc
HAENEN, Ken
Issue Date: 2009
Publisher: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation: JOURNAL OF APPLIED PHYSICS, 105(8). p. 083545-...
Abstract: The incorporation efficiency of phosphorus was studied as a function of the surface orientation of grains in (110)-textured polycrystalline chemical vapor deposited diamond. Cathodoluminescence mapping of such films exhibits large local differences in relative intensities stemming from P-bound and free excitons. Combined with electron backscattering diffraction mapping, these data allow assessing of the donor concentration as a function of the grain orientation. While [P] can vary between 10(15) and >10(18) cm(-3) within one film, misorientation angles of more than 10 degrees with respect to the exact [110] axis assure an enhanced incorporation of P with concentrations surpassing 5x10(17) cm(-3). The role of the surface morphology in the observation of these large incorporation differences is explained.
URI: http://hdl.handle.net/1942/9836
DOI: 10.1063/1.3116736
ISI #: 000268064700071
ISSN: 0021-8979
Category: A1
Type: Journal Contribution
Validation: ecoom, 2010
Appears in Collections: Institute for Materials Research in MicroElectronics - Archive
Institute for Materials Research
Materials Physics

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