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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9820

Title: Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy
Authors: HARDY, An
Adelmann, C.
Van Elshocht, S.
VAN DEN RUL, Heidi
VAN BAEL, Marlies
De Gendt, S.
D'OLIESLAEGER, Marc
Heyns, M.
Kittl, J.A.
MULLENS, Jules
Issue Date: 2009
Publisher: ELSEVIER SCIENCE BV
Citation: APPLIED SURFACE SCIENCE, 255(17). p. 7812-7817
Abstract: Grazing angle attenuated total reflectance Fourier transform infrared spectroscopy is applied to study ultrathin film Hf4+, Sc3+ and Dy3+ oxides, due to its high surface sensitivity. The (multi) metal oxides studied, are of interest as high-k dielectrics. Important properties affecting the permittivity, such as the amorphous or crystalline phase and interfacial reactions, are characterized. Dy2O3 is prone to silicate formation on SiO2/Si substrates, which is expressed in DyScO3 as well, but suppressed in HfDyOx. Sc2O3, HfScOx and HfO2 were found to be stable in contact with SiO2/Si. Deposition of HfO2 in between Dy2O3 or DyScO3 and SiO2, prevents silicate formation, showing a buffer-like behavior for the HfO2. Doping of HfO2 with Dy or Sc prevents monoclinic phase crystallization. Instead, a cubic phase is obtained, which allows a higher permittivity of the films. The phase remains stable after anneal at high temperature. (c) 2009 Elsevier B.V. All rights reserved.
Notes: [Hardy, A.; Van den Rul, H.; Van Bael, M. K.; Mullens, J.] Hasselt Univ, Inorgan & Phys Chem IMO, B-3590 Diepenbeek, Belgium. [Hardy, A.; Van den Rul, H.; Van Bael, M. K.; D'Olieslaeger, M.] IMEC VZW, Div IMOMEC, Diepenbeek, Belgium. [Adelmann, C.; Van Elshocht, S.; De Gendt, S.; Heyns, M.; Kittl, J. A.] IMEC VZW, Heverlee, Belgium. [D'Olieslaeger, M.] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [De Gendt, S.; Heyns, M.] Katholieke Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium.
URI: http://hdl.handle.net/1942/9820
DOI: 10.1016/j.apsusc.2009.04.184
ISI #: 000266567400061
ISSN: 0169-4332
Category: A1
Type: Journal Contribution
Validation: ecoom, 2010
Appears in Collections: Institute for Materials Research in MicroElectronics - Archive
Institute for Materials Research
Laboratory of Inorganic and Physical Chemistry

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