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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/913

Title: Understanding Oxide Degradation Mechanisms in ultra-thin SiO2 through High-Speed, High Resolution in-situ Measurements
Authors: ARESU, Stefano
DE CEUNINCK, Ward
Degraeve, R.
Kaczer, B.
KNUYT, Gilbert
DE SCHEPPER, Luc
Issue Date: 2005
Publisher: Elsevier B.V.
Citation: Microelectronic Engineering, 80(1). p. 182-185
Abstract: A model is proposed and validated for the degradation mechanisms occurring in ultra-thin SiO2 at real operation conditions, based on high-resolution, high-speed in-situ measurements. This state-of-the-art set-up proves that oxide degradation still occurs at low stress conditions and allows distinguishing quantitatively the SILC-contribution from the contribution due to trapping.
URI: http://hdl.handle.net/1942/913
DOI: 10.1016/j.mee.2005.04.065
ISI #: 000231517000043
ISSN: 0167-9317
Category: A1
Type: Journal Contribution
Validation: ecoom, 2006
Appears in Collections: Institute for Materials Research
Institute for Materials Research in MicroElectronics - Archive

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