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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8233

Title: Growth of polycrystalline phosphorous-doped CVD diamond layers
Authors: Lazea, A
MORTET, Vincent
Geithner, P.
Ristein, J.
Issue Date: 2008
Citation: CHEMICAL PHYSICS LETTERS, 454(4-6). p. 310-313
Abstract: Microwave plasma-enhanced chemical vapour deposition (MW PE CVD) growth conditions for preparation of polycrystalline phosphorous-doped diamond layers are presented. The incorporation of substitutional phosphorous was confirmed by low temperature photocurrent (PC) and cathodoluminescence (CL) measurements. The topographical characteristics of thefilms and the relation between the substrate and P-dopedfilm grain orientation were studied by scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The growth process for P-doped layers on (110) oriented polycrystalline diamond was optimised and the best set of parameters differs significantly from the standard conditions used for P-doping of single crystalline (111) oriented diamond surfaces. (c) 2008 Elsevier B.V. All rights reserved.
Notes: Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. IMEC VZW, Div IMOMEC, Diepenbeek, Belgium. Univ Erlangen Nurnberg, Erlangen, Germany.Haenen, K, Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.ken.haenen@uhasselt.be
URI: http://hdl.handle.net/1942/8233
DOI: 10.1016/j.cplett.2008.02.030
ISI #: 000254425200032
ISSN: 0009-2614
Category: A1
Type: Journal Contribution
Validation: ecoom, 2009
Appears in Collections: Institute for Materials Research
Materials Physics
Institute for Materials Research in MicroElectronics - Archive

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