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Showing results 1 to 7 of 7
TitleTypeIssue Date
Design of a new test structure for the study of electromigration with early resistance change measurements
MICROELECTRONICS AND RELIABILITY, 37(12). p. 1813-1816
Journal Contribution1997
Electrical performance, reliability and microstructure of sub-45 nm copper damascene lines fabricated with TEOS backfill
MICROELECTRONIC ENGINEERING, 84(11). p. 2681-2685
Journal Contribution2007
In-situ SEM observation of electromigration in thin metal films at accelerated stress conditions
MICROELECTRONICS RELIABILITY, 40(8-10). p. 1407-1412
Journal Contribution2000
Overview of the kinetics of the early stages of electromigration under low (= realistic) current density stress
MICROELECTRONICS AND RELIABILITY, 38(6-8). p. 1009-1013
Journal Contribution1998
The influence of addition elements on the early resistance changes observed during electromigration testing of Al metal lines
MICROELECTRONICS RELIABILITY, 38(1). p. 87-98
Journal Contribution1998
The kinetics of the early stages of electromigration and concurrent temperature induced processes in thin film metallisations studied by means of an in-situ high resolution resistometric technique
MICROELECTRONICS RELIABILITY, 39(11). p. 1657-1665
Journal Contribution1999
The thermally balanced bridge technique (TBBT): A new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes
MICROELECTRONICS AND RELIABILITY, 37(10-11). p. 1483-1486
Journal Contribution1997
Showing results 1 to 7 of 7